Study Program: Micro- and Nanoelectronics (German and English Modules)

 

Lists of modules of the current semester

If you follow the links to our CAMPUS-system, please make sure that the right semester is being displayed (you can choose the semester in the right upper corner of the screen)!

 

Micro- and Nanoelectronics: Module Catalogue A (8-24 credits required)

Solid State Technology (Module 3101)

- Basic and advanced aspects of semiconductor process technology including oxidation, lithography, wet chemical etching, plasma processes, diffusion, doping, implantation, thin film deposition etc.
- CMOS/VLSI process integration
- Analytical methods such as ellipsometry, microscopy, photoluminescence etc.

Credits: 4           Contact hours per week: 3

Electronic Noise in Devices and Circuits (Module 3104)

This module is taught in English; please follow this link to see the content.

III-V Semiconductors 1 (Module 3107)

- Physical properties of III-V semiconductors and semiconductor nanostructures
- Comparison with silicon and other compound semiconductors
- Metal-semiconductor and semiconductor-semiconductor junctions
- Crystal growth and epitaxy
- Characterization of material and devices, new applications

Credits: 4            Contact hours: 3           Language of instruction: German

Optical Telecommunications 1: Devices (Module 3109)

This module is taught in English; please follow this link to see the content.

Numerical Simulation of Semiconductor Devices (Module 3110)

Fundamentals of simulation of semiconductor devices used in nano-, micro- and power electronics:
- Calculation of capacitances: generalized capacitance definition, numerical methods for solving Poisson's equation, finite-volume methods
- Fundamentals of device simulation: basics of semiconductor physics
- Drift-diffusion model: numerical methods, discretization of balance equations, Gummel's method, Newton's method
- Analytical large-signal model of diodes
- Transient drift-diffusion model and small-signal analysis
- MOS modeling: quasi-static model of transient behavior
- Exercise: Examples from the lecture are examined with a numerical semiconductor device simulator

Credits: 4         Contact hours per week: 3          Language of instruction: German

III-V Semiconductors 2 (Module 3111)

- Semiconductor physics in new (opto-)electronic devices (FET, HBT, LED, LASER, solar cell)
- Technology of semiconductor devices
- AC and DC behavior of transistors (MOSFET, HFET, HBT)
- Material and device measurement techniques
- Typical circuits and industrial applications are analyzed

Credits: 4        Contact hours per week: 3            Language of instruction: German

Optical Telecommunications 2 - Systems (Module 3112)

This module is taught in English; please follow this link to see the content.

Oxide Thin Films for Information Technology (Module 3113)

- Overview of the physical properties of oxide thin films and their application for information technology
- Basic knowledge of thin film growth and deposition methods for the growth of oxide thin films
- Defects in solids and thin films
- Methods for thin film characterization
- Methods for micro- and nanopatterning by 'bottom-up' und 'top-town' methods
- Work- and failure mechanisms of oxide thin film devices

Credits: 4          Contact hours per week: 3        Language of instruction: German/English

Application of Oxide Thin Films for Information Technology (Module 3114)

- Introduction to the physical properties of transition metal oxides
- Polar properties of oxide insulators and their fields of application
- Metal to insulator transitions in oxides and their application for data storage
- Multiferroic heterostructures and their application in information technology
- Functional properties of epitaxial oxide heterointerfaces
- Oxide high temperature superconductors and their possible fields of application

Credits: 4          Contact hours per week: 3        Language of instruction: English

Electronic and optical Measurement Techniques (Module 3116)

The fundamental principles and circuits for measuring electric quantities, including ultra small and ultra fast signals, will be explained and illustrated with help of examples. In addition to the measurement of single quantities, the concept of a complex measuring hardware will be explained using a scanning tunneling microscope (STM) as an example. After an introduction into the general functionality of scanning probe microscopes, the r components for a STM will be described and corresponding circuits will be evolved step by step. Examples: I/V converters, logarithmizing and comparing devices, high-voltage amplifiers, A/D and D/A converters. Furthermore, mechanical oscillations and computer measuring techniques will be treated.

Basics

  • Operational amplifiers
  • Impedance measurements (mHz to GHz)
  • Phase sensitive detection
  • Measurement of electric polarization
  • Layout concepts (shielding etc.)
  • Limits of measurement techniques (ultra small signals, ultra fast signals, etc.)
  • Circuit and system concepts - Scanning probe microscopy
  • I/V converter for extremely large dynamical areas
  • A/D-D/A converters
  • High-voltage amplifiers
  • Mechanical oscillations and their compensation
  • Tunneling microscope with sub-atomic definition
  • Combined scanning probe microscopes

Credits: 4               Contact hours per week: 3             Language of instruction: English

Silicon-Based Sensor and Actuator Systems 1 (Modul 3117)

The lecture “Silicon-based Sensor and Actuator Systems” deals with the conception and the manufacturing of microsystems based on the silicon fabrication technologies. A microsystem is the combination of sensors, actuators and signal processing to a functional unit with structural dimensions in the micrometer range. To achieve this goal, methods of silicon technologies are applied. This allows benefiting from the large experience in the microelectronics and ensures compatibility.

The first part of the lecture “Silicon-based Sensor and Actuator Systems” addresses operating principles of silicon-based microsensors and their implementation into marketable products. Current examples and applications are presented. Besides an introduction to the physics of semiconductor devices, the lecture comprises the field of physical sensors. In detail, the lecture is divided into the following areas: sensors for thermal signals, flow sensors, radiation sensors, magnetic sensors, pressure sensors, MEMS microphones, fundamentals of inductive telemetry systems, accelerometers and gyroscopes.

Credits: 4               Contact hours per week: 3             Language of instruction: English

Silicon-Based Sensor and Actuator Systems 2 (Modul 3112)

The second part of the lecture “Silicon-based Sensor and Actuator Systems” addresses operating principles and the technical realization of chemical sensors implemented in silicon microtechnology, so called “artificial noses”. Further topics are micro fluidics, microreactor technology and simulation of microsystems. Fundamental challenges of microsystems technology, for example interfaces to the macroscopic world, are discussed in the second half of the semester. The emphasis here lies on microsystems packaging. Therefore, the different methods of die attach, reliability and test of microsystems and advanced (e.g. 3-dimensional) packaging are presented.

Credits: 4               Contact hours per week: 3             Language of instruction: English

Novel Materials and Devices for Information Technology 1 (Modul 3119)

State variables for memories and processing of information; fundamental principles of logic and memory devices; physical limits of scaling (thermodynamic, quantum mechanical, electromagnetic limit)

  • Mesoscopic transport and interconnects
  • Charge-based memorys (DRAM, ferroelectric memories)
  • Magneto electronic memories
  • Redox-based and phase-change-based resistive memories
  • New mass storage concepts (scanning probe methods)
  • Alternative logic concepts (spintronics, OFETs, molecular electronics)
  • Architectural concepts for alternative logic and memory devices

Credits: 4               Contact hours per week: 3             Language of instruction: English

further information in the CAMPUS-System

Novel Materials and Devices for Information Technology 2 (Modul 3120)

  • Compound semiconductor materials and devices
  • Organic semiconductors
  • Optical communications
  • Cell-electronics coupling
  • Displays

Credits: 4               Contact hours per week: 3             Language of instruction: English

further information in the CAMPUS-System

Fabrication and Characterization of Nanoelectronic Devices and Circuits (Modul 3121)

Students will actively fabricate in a cleanroom their own silicon chip with micro-/nanoscale CMOS devices. The transistors will be concatenated to form simple building blocks of logic circuits such as inverters, NAND gates and a half-adder. The impact of the fabrication technology and the design of the devices on the circuit performance and the power consumption will be investigated. Students attending the course “Quantum simulations of carbon nanotube and graphene nanoribbon field-effect transistors” will use a simple simulation tool to design the CMOS devices.

Credits: 4               Contact hours per week: 3             Language of instruction: English

further information in the CAMPUS-System

 

Lists of modules of the current semester

If you follow the links to our CAMPUS-system, please make sure that the right semester is being displayed (you can choose the semester in the right upper corner of the screen)!

 

Micro- and Nanoelectronics: Module Catalogue B (8-24 credits required)

Analog and Mixed Signal Circuits 2 (Module 3202)

- Functionality, design methods of analog and quick digital circuits
- Introduction
- Active microwave components
- Microwave amplifiers
- Mixers
- Oscillators
- Digital circuits with MESFETs
- Filter synthesis
- Transformers and baluns
- Attenuators and phase shifters
- RF circuit design
- Microwave switches

Credits: 4           Contact hours per week: 3          Language of instruction: English

Analog and Mixed Signal Circuits 1 (Module 3204)

In AMS 1, all aspects of power supply concepts for low power integrated systems and devices are considered. We begin with the fundamentals:
- Active and passive integrated devices
- Various technological types of these elements, i.e. LDMOS
- Basic circuits (i.e. level shifters)
- Biasing
- Operational amplifiers, transconductance amplifiers (OTAs)
We continue with the special topics which are discussed in detail with respect to practical implementations:
- Integrated voltage converters
- Digital control of voltage converters
- Efficient solutions for LED power supply
- Power management of complex systems and devices
- Energy harvesting

Credits: 4         Contact hours per week: 3            Language of instruction: German

Advanced RF Systems 2 (Module 3205)

- RF System design from a physical point of view; consideration of limitations of implementation
- Modulation theory from a physical point of view
- Special RF requirements in FDD-Systems
- Architectures for transmitters and receivers

Introduction and comparison of different mobile and wireless standards: LTE, UMTS, GSM
- WLAN, WiMax
- Bluetooth, ZigBee, DECT
- RF architectures for RFID transponders and sensor systems


Credits: 4        Contact hours per week: 3            Language of instruction: German

Radar Systems (Module 3209)

Radar Systems addresses the design and basic aspects of radar systems Starting with the fundamentals:  

- History of radar  
- Radar principle  
- Radar equation for different cases  
- Radar displays, transmitters, and receivers  
- Pulse radar  
- CW radar and Doppler shift  
- FMCW radar

Further focus on:  
- Bistatic radar systems  
- Passive radar  
- Radiometry  
- Radar in Aviation  
- Weather radar  
- Automotive radar systems  
- SAR

Credits: 4           Contact hours per week: 3             Language of instruction: English

VLSI Architectures for Digital Signal Processing 1 (Module 3210)

  • VLSI fundamentals of the nano-scale CMOS technologies,
  • Transistor properties,
  • Variability,
  • Parasitic elements,
  • Line parameters,
  • CMOS basic circuits,
  • Time response,
  • Power loss and energy requirement
  • Scaling,
  • Parallelization and multiple use,
  • Pipelining,
  • Main features of quantitative optimization,
  • Interaction between the design levels,
  • Equivalence transformations

Credits: 4           Contact hours per week: 3             Language of instruction: English

VLSI Architectures for Digital Signal Processing 2 (Module 3211)

  • Fundamental examples of architectures of digital signal processing,
  • Digitale filters,
  • correlators,
  • Decimation and interpolation filters,
  • Parallelisation and multiple use of filters,
  • linear and non-linear recursive structures,
  • Parallelisation and multiple use of recursive structures,
  • Selected current and examplary applications.

Credits: 4           Contact hours per week: 3             Language of instruction: English

Computer Arithmetic 1 (Module 3212)

  • Arithmetic standard operations,
  • addition,
  • Subtraction,
  • Comparators,
  • Sorters,
  • Multiplication,
  • division,
  • non-redundant vs. redundant arithmetics,
  • Residue class arithmetics,
  • Elementary arithmetic functions,
  • Algebraic elementary operations,
  • Root extraction,
  • Polynom approximation

Credits: 4           Contact hours per week: 3             Language of instruction: German/English

Computer Arithmetic 2 (Module 3213)

  • CORDIC algorithm,
  • Galois field arithmetics,
  • Error detecting and error tolerating arithmetic,
  • Linear transformations,
  • DFT and FFT,
  • DCT and FDCT,
  • Applications in digital signal processing, especailly in channel coding

Credits: 4           Contact hours per week: 3             Language of instruction: German/English

Quantum Simulations of Carbon Nanotube and Graphene Nano-Ribbon Field-Effect Transistors (Module 3214)

The course starts with a presentation of the quantum mechanical foundation of the device simulation of carbon nanotube and graphene transistors based on the non-equilibrium Green's function formalism.
Subsequently, students will develop their own quantum simulation tool and will use this tool to investigate the impact of various transistor parameters on the device functionality.

Credits: 4           Contact hours per week: 3           Language of instruction: English  

further information in the Campus-system

 

Lists of modules of the current semester

If you follow the links to our CAMPUS-system, please make sure that the right semester is being displayed (you can choose the semester in the right upper corner of the screen)!

 

Micro- and Nanoelectronics: Module Catalogue C (4 credits required)

High Frequency Technology 1 (Module 3301)

- Lumped elements
- Microwave stripline components
- Multi conductor systems and components
- Cavity resonators
- Disturbance by change of volume or material, applications
- Non-reciprocal elements
- Pulse technique
- Fiber optic systems
- High frequency measurement techniques

Credits: 4          Contact hours per week: 3             Language of instruction: German

Digital Speech Processing 1 (Module 3302)

The two-semester lecture Digital Speech Processing 1 deals with the basics and applications of digital speech processing. The focus of the lecture is on the fundamentals of digital signal processing specific for speech signals:
- Model of speech production
- Characteristics of hearing (psychoacoustics)
- Spectral transformations
- Filter banks for spectral analysis and synthesis
- Stochastic signal and signal estimation
- Linear prediction
- Quantisation

Credits: 4           Contact hours per week: 3          Language of instruction: German

Multimedia Communication Systems 1 (Module 3303)

This module is taught in English; please follow this link to see the content.

Digital Image Processing 1 (Module 3304)

- Introduction, importance of visual information
- Imaging I: "good imaging beats good image processing" - sensors (human eye, CCD/CMOS sensors), geometry mapping, thin lens, optical systems, telephoto lenses and wide-angle-lenses, f-number, depth of focus
- X-ray imaging: generation of X-ray radiation, absorption and distribution, X-ray image detection
- Two dimensional, linear systems theory: 2D-convolution, point spread function, 2D-LSI-systems, eigenfunctions, 2D-Fourier transformations, optical and modulation transfer function
- 2D-Fourier transformation and computer tomography: Fourier transformation in polar coordinates, Kelvin-Stockes theorem, rotational symmetry, Hankel transformation, Fourier slice theorem, computer tomography, filtered rear projection
- Digitalization of image data: 2D-scanning, resolution limit, aliasing, reconstruction, 2D-Fourier transformation of location-discrete signals, 2D-discrete and fast Fourier transformation, application in image data compression
- Image enhancement: point operations and histograms, near neighbour operations, convolution, binomial filters, fuzzy mask, processing chain in digital radiography, non-linear filters (homomorphic filters, median filter, adaptive filters)
- Feature extraction I: edge detection (gradients and Laplace filters), edge detection (edge descriptors, accuracy and reliability, the Canny edge detector)
- Feature extraction II: oriented and directed structure (description of oriented image contents, detection and estimation of simple orientations, detection and estimation of multi-oriented image contents)

Credits: 4            Contact hours per week: 3            Language of instruction: German

Robotics and Man-Machine Interaction 1 (Module 3306)

- Basics in robotics: components of robot systems - kinematic structures - robot architectures
- Position and orientation in space: position and orientation - descriptions of orientation - homogeneous transformation
- Denavit-Hartenberg parameterization
- Forward kinematics
- Inverse kinematics
- Jacobian Matrix
- Humans as components in systems: information input - information processing - information output
- Ergonomic evaluations of HMI: empiric evaluations - simulative evaluations
- Virtual environments
- Human machine interfaces (HMI): robustness of HMI - dialog systems - dynamic systems

Credits: 4          Contact hours per week: 3          Language of instruction: German

Medical Systems 1 (Module 3307)

- Modelling
- Breathing and lung function diagnosis
- Tissue optics & laser
- Electrophysiology
- Muscles
- Heart
- Arterial wave equation
- Electrodes
- Treatment of renal failure
- Kidney and dialysis
- Body sensor networks

Credits: 4         Contact hours per week: 3           Language of instruction: German

Advanced RF Systems 1 (Module 3308)

- Microwave engineering and their applications:
- Introduction to wave propagation
- Microwave radio relay
- Communication satellites
- Fundamentals of RADAR
- Remote sensing
- RF heating
- Linearization techniques

Credits: 4           Contact hours per week: 3            Language of instruction: English

Basic Techniques in Computer Graphics (Module 3309)

- Foundations of geometry representation (polygonal meshes, volumetric representations, freeform curves and surfaces)
- Local illumination (3D transformations, clipping, rasterization, lighting, shading)
- Global illumination (visibility problem, shadow computation, ray tracing), radiosity
- Foundations of image processing (transformations, color coding, image compression)

Credits: 6          Contact hours per week: 5           Language of instruction: English

Introduction to Statistical Pattern Recognition (Module 3310)

- Introduction/motivation
- Bayes' decision rule
- Training and learning
- Model-free methods
- Mixture densities and cluster analysis
- Stochastic finite automata
- Feature extraction

Credits: 6            Contact hours per week: 5          Language of instruction: English

Power Electronics – Control, Synthesis and Applications (Module 3311)

This module is taught in English; please follow this link to see the content.

Automation of Complex Power Systems (Module 3312)

This module is taught in English; please follow this link to see the content.

Electrical On-Board Supply Systems for Motor Vehicles (Module 3313)

- Overview of the electric on-board supply systems, goals
- Starter
- Generators
- Voltage regulator
- Battery
- Design of the on-board power supply
- Operational reliability
- Electronic in vehicle
- Networking in the motor vehicle
- Flywheelstarter/generator
- Drives for electric vehicles

Credits: 4            Contact hours per week: 3         Language of instruction: German

Electrical Power from Regenerative Energy Sources (Module 3314)

- Energy demand and supply, global problems of energy supply
- Potentials of renewable energy sources
- Cost accounting
- Physical basics, production, systems engineering, social acceptance of photovoltaic, wind, hydro and other renewable sources: solar thermal, biomass, geothermal, etc
- Integration of renewable sources into the electricity supply system
- Development status and prospects

Credits: 4          Contact hours per week: 3             Language of instruction: German

Advanced Control Systems (Module 3315)

This module is taught in English; please follow this link to see the content.

Satellite Navigation (Module 3316)

- Introduction to radio based determination of position, time and velocity  
- Position and velocity estimation - Satellite constellations and orbits  
- Signals (modulation and coding) and navigation services (GPS and Galileo)  
- Signal acquisition and tracking  
- Discriminators for delay, frequency and phase as well as associated control loops and their implementation  
- Propagation errors and their mitigation: multipath, ionospheric effects, tropospheric effects, interference  
- Accuracy of position and time estimation  
- Reference systems for position and time  
- Relativistic corrections

Credits: 4          Contact hours per week: 3             Language of instruction: English

Technology of Extreme-UV Radiation (Module 3317)

Lecture 1:

Motivation for the use of EUV: application of short wavelength radiation for fabrication and characterization of structures in the sub-50 nm range; Example: chip manufacturing; definition, specific characteristics and application potential of extreme ultraviolet (EUV) spectral range; outlook of the course content

Lecture 2:

EUV radiation and its interaction with matter; basic processes of ionization and radiation emission in isolated atoms, energy levels, absorption edges; description of light-matter interaction using scattering cross sections; Complex atomic scattering factors; scattering, refraction and reflection; wavelength dependence of refractive index

Lecture 3:

EUV radiation (continued); EUV optics; wavelength dependence of penetration depth of the EUV radiation; refraction and reflection at interfaces; grazing incidence optics; multilayer mirrors, manufacturing of multilayers 

Lecture 4:

EUV optics (continued); contamination of optics under EUV illumination; diffractive optics; fresnel zone plates 

Lecture 5:

EUV lithography; .ithography market, Moore's Law; optical lithography, resolution;lithography process: EUV, scanner system, optical system, mask, resist, source-collector-module; source requirements for HVM: collection efficiency and etendue

Lecture 6: EUV radiation sources; synchrotron radiation, free electron laser; x-ray tubes, generation of high harmonics of laser radiation; ülasma based radiation sources: bremsstrahlung, recombination radiation, line radiation; Ionization states; pseudo-plank emitter, radiance of optically thick lines; xe and sn emission at 13.5 nm, spectral efficiency; etendue and brightness (radiance) 

Lecture 7:

EUV radiation sources (continued); radiating power of a pulsed EUV source; laser produced plasmas; discharge produced plasmas; sources for EUV lithography and metrology; Challenges: debris, lifetime, efficiency, power and radiance scaling 

Lecture 8:

source metrology; requirements for EUV metrology; band-pass filters; radiation detectors: photodiodes, spatially resolving detectors (CCD); quantum efficiency and quantum yield; flat-field spectrometer; pinhole camera; Multilayer based imaging camera

Lecture 9:

source metrology (continued); in-band energy monitor; calibration factor and determination of in-band radiation energy; scintillators as radiation converters 

Lecture 10:

Exposure tool for characterization of EUV photoresists; problem formulation, tool requirements; approach and solutions: implementation concept, control system, exposure cycle, results; characterization and acceptance: field homogeneity, mirror alignment, fields calibration; additional options: resist contamination studies, transmission mask based contact lithography; UV resists; interference- and proximity-lithography 

Lecture 11:

Grazing incidence EUV reflectometry for analysis of ultra-thin films; theoretical background: influence of the layer thickness and roughness on the angular and wavelength dependence of the reflectivity; determination of refractive indices: isoreflection curves; laboratory based multi-angle spectroscopic EUV reflectometer; applications; NEXAFS; benchmarking; mask blanks inspection by normal incidence EUV reflectometry (optional); triangulation for alignment; Integrated reflectivity (optional) 

Lecture 12.

•  EUV and X-ray microscopy 

•  Sample thickness vs. resolution 

•  Contrast mechanisms 

•  Natural contrast windows; Example: water window microscopy 

•  Sensitivity index; Detector influence 

•  Source radiance requirements

•  Bright field microscopy

Lecture 13.

•  EUV and X-ray microscopy (continued) 

•  Application examples with lab sources 

•  Dark field microscopy 

•  Mask blank defect inspection 

•  Scatterometry 

Lecture 14.

•  X-ray and EUV laser 

•  Stimulated emission and ASE; Three level lasing model 

•  Pumping mechanisms: three-body recombination, electron collisional excitation, charge transfer, photo-pumping 

•  Gain coefficient; Frequency scaling 

•  Experiments 

Lecture 15.

•  X -ray and EUV laser (continued) 

•  Table-top EUV laser 

•  Further EUV applications: color centers generation 

•  Photoemission spectroscopy and microscopy 

•  Summary of the course

High Frequency Electronics (Module 3318)

High Frequency Electronics instructs the design and basic aspects of RF nonlinear circuits.
Starting with the basics:

- Analytic models of nonlinear circuits
- Taylor, Voltera, nonlinear Fourier, parametric calculation

Futher focus on:
- Large signal linear PA behaviour
- SMAPs
- wideband PAs
- parametrics amplifiers
- frequency converters, frequency multipliers
- oscillators
- RP switches

Credits: 4          Contact hours per week: 3             Language of instruction: English

Modern Communications Technique - EMC with People and Electronic Devices (Module 3319)

Electromagnetic Environmental Compability (EMEC)
- Non-thermal effect of RF-fields  
- Basic limitation values like the specific absorption rate (SAR) and reference values  
- ICNIRP and BIMSCHV (Germany)  
- Biological mechanisms  
- Relevant radiation sources (mobil radio, electrical high power installations etc.)  
- EMEC - measurement techniques and methods  

Electromagnetic Compability (EMC) of electronic devices
- Introduction
- Guidelines and requirements  
- Couplings effects  
- Basic principles for interference suppression  
- Verification of interference immunity  
- Verification of interference emission  
- EMC test setups  
- Measurement equipment  
- Spectrum analyser and detectors  
- Methods for hardening

Credits: 4               Contact hours per week: 3             Language of instruction: German